Renesas Electronics RJH60D3DPP-M0#T2 IGBT, 35 A 600 V, 3-Pin TO-220FL, Through Hole
- RS Stock No.:
- 124-3700
- Mfr. Part No.:
- RJH60D3DPP-M0#T2
- Manufacturer:
- Renesas Electronics
Discontinued product
- RS Stock No.:
- 124-3700
- Mfr. Part No.:
- RJH60D3DPP-M0#T2
- Manufacturer:
- Renesas Electronics
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 35 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 40 W |
| Package Type | TO-220FL |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 10 x 4.5 x 15mm |
| Gate Capacitance | 900pF |
| Maximum Operating Temperature | +150 °C |