Fuji Electric 2MBi75VA-120-50, M263 Series IGBT Module, 75 A max, 1200 V, Panel Mount

  • RS Stock No. 771-6294
  • Mfr. Part No. 2MBi75VA-120-50
  • Manufacturer Fuji Electric
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Modules 2-Pack, Fuji Electric

V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration Series
Transistor Configuration Series
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type M263
Pin Count 7
Maximum Power Dissipation 390 W
Dimensions 94 x 34 x 30mm
Height 30mm
Length 94mm
Maximum Operating Temperature +150 °C
Width 34mm
15 In Global stock for delivery within 4 - 8 working days
Price Each
PHP 3,476.15
(exc. VAT)
PHP 3,893.29
(inc. VAT)
units
Per Unit
1 - 9
PHP3,476.15
10 - 49
PHP3,263.83
50 - 99
PHP3,115.61
100 - 249
PHP2,925.62
250 +
PHP2,819.16
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