- RS Stock No.:
- 761-3341
- Mfr. Part No.:
- FF900R12IE4BOSA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 23/07/2024, delivery within 10 working days from desptach date
Added
Price Each
PHP27,884.97
(exc. VAT)
PHP31,231.17
(inc. VAT)
Units | Per Unit |
1 - 9 | PHP27,884.97 |
10 - 49 | PHP27,327.28 |
50 - 99 | PHP26,780.71 |
100 - 249 | PHP26,245.11 |
250 + | PHP25,720.20 |
- RS Stock No.:
- 761-3341
- Mfr. Part No.:
- FF900R12IE4BOSA1
- Manufacturer:
- Infineon
Legislation and Compliance
- COO (Country of Origin):
- DE
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 900 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 510 kW |
Package Type | PrimePACK2 |
Configuration | Series |
Mounting Type | Screw Mount |
Channel Type | N |
Pin Count | 10 |
Transistor Configuration | Series |
Dimensions | 172 x 89 x 38mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +150 °C |