ON Semiconductor NXH25C120L2C2SG, DIP26 , N-Channel 3 Phase IGBT Module, 25 A max, 650 V, Through Hole

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

The ON Semiconductor transfer molded power module containing a converter-inverter-brake circuit consisting of six 25 Ampere and 1600 Volts rectifiers, six 25 Ampere and 1200 Volts IGBTs with inverse diodes, one 25 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.

Low thermal resistance
6mm clearance distance between pin to heatsink
Solderable pins
Thermistor
Pb free
Halogen free or BFR free
RoHS compliant

Specifications
Attribute Value
Configuration 3 Phase
Maximum Continuous Collector Current 25 A
Maximum Collector Emitter Voltage 650 V
Number of Transistors 6
Maximum Gate Emitter Voltage ±20.0V
Channel Type N
Mounting Type Through Hole
Package Type DIP26
2 In Global stock for delivery within 4 - 8 working days
Price Each
PHP 2,141.87
(exc. VAT)
PHP 2,398.89
(inc. VAT)
units
Per Unit
1 +
PHP2,141.87