Semikron SKM300GB12E4, SEMITRANS3 Dual IGBT Transistor Module, 422 A max, 1200 V, Screw Mount

  • RS Stock No. 125-1113
  • Mfr. Part No. SKM300GB12E4
  • Manufacturer Semikron
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): SK
Product Details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration Dual
Transistor Configuration Half Bridge
Maximum Continuous Collector Current 422 A
Maximum Collector Emitter Voltage 1200 V
Number of Transistors 2
Maximum Gate Emitter Voltage 20V
Channel Type N
Mounting Type Screw Mount
Package Type SEMITRANS3
Pin Count 7
Switching Speed 12kHz
Dimensions 106.4 x 61.4 x 30.5mm
Height 30.5mm
Length 106.4mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
Width 61.4mm
5 In Global stock for delivery within 4 - 8 working days
Price Each
PHP 11,978.95
(exc. VAT)
PHP 13,416.42
(inc. VAT)
units
Per Unit
1 - 1
PHP11,978.95
2 - 4
PHP11,417.50
5 +
PHP11,161.84
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