- RS Stock No.:
- 124-8789
- Mfr. Part No.:
- FF200R12KE3HOSA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 03/05/2024, delivery within 10 working days from desptach date
Added
Price Each (In a Box of 10)
PHP7,655.246
(exc. VAT)
PHP8,573.876
(inc. VAT)
Units | Per Unit | Per Box* |
10 - 10 | PHP7,655.246 | PHP76,552.46 |
20 + | PHP7,425.588 | PHP74,255.88 |
*price indicative |
- RS Stock No.:
- 124-8789
- Mfr. Part No.:
- FF200R12KE3HOSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 295 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 1050 W |
Configuration | Series |
Package Type | 62MM Module |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 7 |
Switching Speed | 1MHz |
Transistor Configuration | Series |
Dimensions | 106.4 x 61.4 x 29mm |
Maximum Operating Temperature | +125 °C |
Minimum Operating Temperature | -40 °C |