- RS Stock No.:
- 111-6100
- Mfr. Part No.:
- FF1400R12IP4BOSA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 23/03/2026, delivery within 10 working days from desptach date
Added
Price Each
PHP40,450.88
(exc. VAT)
PHP45,304.99
(inc. VAT)
Units | Per Unit |
1 - 2 | PHP40,450.88 |
3 - 4 | PHP40,167.77 |
5 - 6 | PHP39,886.60 |
7 - 9 | PHP39,328.18 |
10 + | PHP38,777.65 |
- RS Stock No.:
- 111-6100
- Mfr. Part No.:
- FF1400R12IP4BOSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
Product Details
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 1.4 kA |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 7.65 kW |
Configuration | Series |
Package Type | AG-PRIME3-1 |
Mounting Type | Panel Mount |
Channel Type | N |
Transistor Configuration | Series |
Dimensions | 250 x 89 x 38mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |