IXYS MID145-12A3, Y4 M5 IGBT Module, 160 A max, 1200 V, Panel Mount

  • RS Stock No. 194-401
  • Mfr. Part No. MID145-12A3
  • Manufacturer IXYS
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration Single
Configuration Single
Maximum Continuous Collector Current 160 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type Y4 M5
Pin Count 7
Dimensions 94 x 34 x 30mm
Height 30mm
Length 94mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Width 34mm
Temporarily out of stock - back order for despatch 09/01/2020, delivery within 5 working days from desptach date
Price Each
PHP 3,117.98
(exc. VAT)
PHP 3,492.14
(inc. VAT)
units
Per Unit
1 - 9
PHP3,117.98
10 - 49
PHP3,116.54
50 - 99
PHP3,114.81
100 - 249
PHP3,025.93
250 +
PHP3,024.46
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in ...
Description:
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.