- RS Stock No.:
- 186-8066
- Mfr. Part No.:
- MJH11019G
- Manufacturer:
- onsemi
- RS Stock No.:
- 186-8066
- Mfr. Part No.:
- MJH11019G
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11017, MJH11019, MJH11021 (PNP), MJH11018, MJH11020, MJH11022 (NPN) are complementary devices.
High DC Current Gain @ 10 Adc - hFE = 400 Min (All Types)
Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21
Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A
Monolithic Construction
Pb-Free Packages are Available
Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21
Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A
Monolithic Construction
Pb-Free Packages are Available
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Transistor Type | PNP |
Maximum Collector Emitter Voltage | -200 V |
Package Type | SOT-93 |
Mounting Type | Through Hole |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Emitter Base Voltage | 5 V dc |
Pin Count | 3 |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Dimensions | 15.2 x 4.9 x 20.35mm |