STMicroelectronics BUL1102EFP NPN Bipolar Transistor, 4 A, 8 (Peak) A, 450 V, 3-Pin TO-220FP

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.

High voltage capability
Very high switching speed
Applications
Four lamp electronic ballast for:
120 V mains in push-pull configuration
277 V mains in half bridge current feed configuration

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 4 A, 8 (Peak) A
Maximum Collector Emitter Voltage 450 V
Package Type TO-220FP
Mounting Type Through Hole
Maximum Power Dissipation 70 W
Transistor Configuration Single
Maximum Emitter Base Voltage 12 V
Pin Count 3
Number of Elements per Chip 1
Maximum Collector Emitter Saturation Voltage 1.5 V
Dimensions 10.4 x 4.6 x 16.4mm
Maximum Operating Temperature +150 °C
Maximum Base Emitter Saturation Voltage 1.5 V
1840 In Global stock for delivery within 4 - 8 working days
Price Each (In a Pack of 10)
PHP 50.235
(exc. VAT)
PHP 56.263
(inc. VAT)
units
Per Unit
Per Pack*
10 - 10
PHP50.235
PHP502.35
20 - 90
PHP49.555
PHP495.55
100 - 490
PHP41.822
PHP418.22
500 - 990
PHP35.45
PHP354.50
1000 +
PHP29.082
PHP290.82
*price indicative
Packaging Options: