Nexperia PBHV8118T,215 NPN Transistor, 1 A, 180 V, 3-Pin SOT-23

  • RS Stock No. 165-8711
  • Mfr. Part No. PBHV8118T,215
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 180 V
Package Type SOT-23
Mounting Type Surface Mount
Maximum Power Dissipation 300 mW
Minimum DC Current Gain 100
Transistor Configuration Single
Maximum Collector Base Voltage 400 V
Maximum Emitter Base Voltage 6 V
Maximum Operating Frequency 100 MHz
Pin Count 3
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Maximum Collector Emitter Saturation Voltage 60 mV
Maximum Operating Temperature +150 °C
Width 1.4mm
Height 1.1mm
Maximum Base Emitter Saturation Voltage 1.2 V
Dimensions 3 x 1.4 x 1.1mm
Length 3mm
Temporarily out of stock - back order for despatch 16/06/2020, delivery within 5 working days from desptach date
Price Each (On a Reel of 3000)
PHP 8.661
(exc. VAT)
PHP 9.70
(inc. VAT)
units
Per Unit
Per Reel*
3000 +
PHP8.661
PHP25,983.00
*price indicative
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