MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 124-9024
Mfr. Part No.IRLB3034PBF
BrandInfineon
PHP146.633
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N 343 A 40 V 2 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 2.5V 1V 375 W Single 1
RS Stock No. 688-7204
Mfr. Part No.IRLB3034PBF
BrandInfineon
PHP173.385
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N 343 A 40 V 2 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 2.5V 1V 375 W Single 1
RS Stock No. 159-6516
Mfr. Part No.IRFP460BPBF
BrandVishay
PHP154.35
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N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS Stock No. 787-9140
Mfr. Part No.IRFP460BPBF
BrandVishay
PHP199.39
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N 20 A 500 V 250 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 278 W Single 1
RS Stock No. 165-7605
Mfr. Part No.IRFB3004PBF
BrandInfineon
PHP224.837
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N 340 A 40 V 2 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 380 W Single 1
RS Stock No. 688-6904
Mfr. Part No.IRFB3004PBF
BrandInfineon
PHP264.455
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N 340 A 40 V 2 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 380 W Single 1
RS Stock No. 725-9313
Mfr. Part No.IRLB3813PBF
BrandInfineon
PHP108.555
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N 260 A 30 V 2 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 2.35V 1.35V 230 W Single 1
RS Stock No. 913-4032
Mfr. Part No.IRLB3813PBF
BrandInfineon
PHP81.473
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N 260 A 30 V 2 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 2.35V 1.35V 230 W Single 1
RS Stock No. 756-0376
Mfr. Part No.2SK4207(Q)
BrandToshiba
PHP239.85
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N 13 A 900 V 950 mΩ SC-65 Through Hole 3 -30 V, +30 V Enhancement 4V - 150 W Single 1
RS Stock No. 541-1720
Mfr. Part No.IRF5210PBF
BrandInfineon
PHP155.41
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P 40 A 100 V 60 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 200 W Single 1
RS Stock No. 415-354
Mfr. Part No.2SK3878(F)
BrandToshiba
PHP230.605
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N 9 A 900 V 1.3 Ω TO-3PN Through Hole 3 -30 V, +30 V Enhancement 4V - 150 W Single 1
RS Stock No. 919-4915
Mfr. Part No.IRF5210PBF
BrandInfineon
PHP111.132
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P 40 A 100 V 60 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 200 W Single 1
RS Stock No. 739-0224
Mfr. Part No.2N7000TA
Brandonsemi
PHP19.966
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N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -30 V, +30 V Enhancement - 0.3V 400 mW Single 1
RS Stock No. 124-1310
Mfr. Part No.2N7000TA
Brandonsemi
PHP4.245
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N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -30 V, +30 V Enhancement - 0.3V 400 mW Single 1
RS Stock No. 903-4074
Mfr. Part No.2N7000-D26Z
Brandonsemi
PHP11.067
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N 200 mA 60 V 9 Ω TO-92 Through Hole 3 -40 V, +40 V Enhancement - 0.8V 400 mW Single 1
RS Stock No. 169-8553
Mfr. Part No.2N7000
Brandonsemi
PHP5.614
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N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement - 0.8V 400 mW Single 1
RS Stock No. 671-4733
Mfr. Part No.2N7000
Brandonsemi
PHP17.782
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N 200 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement - 0.8V 400 mW Single 1
RS Stock No. 178-0786
Mfr. Part No.IRFP9240PBF
BrandVishay
PHP128.11
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Mfr. Part No.IRF5305PBF
BrandInfineon
PHP75.59
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P 31 A 55 V 60 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 110 W Single 1
RS Stock No. 541-0862
Mfr. Part No.IRFP9240PBF
BrandVishay
PHP150.81
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P 12 A 200 V 500 mΩ TO-247AC Through Hole 3 -20 V, +20 V Enhancement - 2V 150 W Single 1