- RS Stock No.:
- 168-5891
- Mfr. Part No.:
- STP18N60DM2
- Manufacturer:
- STMicroelectronics
Discontinued product
- RS Stock No.:
- 168-5891
- Mfr. Part No.:
- STP18N60DM2
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 12 A |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 290 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 90 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -25 V, +25 V |
Typical Gate Charge @ Vgs | 20 nC @ 10 V |
Length | 10.4mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Width | 4.6mm |
Number of Elements per Chip | 1 |
Series | MDmesh DM2 |
Height | 15.75mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.6V |