onsemi NXH35C120L2C2ESG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole
- RS Stock No.:
- 202-5680
- Mfr. Part No.:
- NXH35C120L2C2ESG
- Manufacturer:
- onsemi
3 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days
Added
Price Each
PHP4,318.51
(exc. VAT)
PHP4,836.73
(inc. VAT)
| Units | Per Unit |
| 1 + | PHP4,318.51 |
- RS Stock No.:
- 202-5680
- Mfr. Part No.:
- NXH35C120L2C2ESG
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
The ON Semiconductor transfer molded power module with low thermal resistance substrate containing a converter-inverter-brake circuit consisting of six 35 Ampere and 1600 Volts rectifiers, six 35 Ampere and 1200 Volts IGBTs with inverse diodes, one 35 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.
Low thermal resistance
6mm clearance distance between pin to heatsink
Solderable pins
Thermistor
Pb free
Halogen free or BFR free
RoHS compliant
6mm clearance distance between pin to heatsink
Solderable pins
Thermistor
Pb free
Halogen free or BFR free
RoHS compliant
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 35 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20.0V |
| Number of Transistors | 6 |
| Configuration | 3 Phase |
| Package Type | DIP26 |
| Mounting Type | Through Hole |
| Channel Type | N |